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溅射离子枪,等离子体发生源

简要描述:溅射离子枪,等离子体发生源溅射清洗/表面科学中样品表面处理, MBE and HV 溅射过程

离子辅助沉积

离子束溅射镀膜

反应离子刻蚀

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  • 厂商性质:代理商
  • 更新时间:2023-09-06
  • 访  问  量:175

详细介绍

溅射离子枪,等离子体发生源

溅射离子枪,等离子体发生源

IonEtch Sputter GunIonEtch Sputter Gun
溅射离子枪主要用途:

  • 溅射清洗/表面科学中样品表面处理, MBE and HV 溅射过程

  • 离子辅助沉积

  • 离子束溅射镀膜

  • 反应离子刻蚀
    技术指标:

    离子能量25eV - 5keV
    总的离子束电流1mA (at 5kV with Argon)
    High Current Version: up to 4mA (at 5kV with Argon)
    电流密度120μA/cm2 at 100mm working distance
    离子束发散角Ion energy dependant (typically 15°)
    工作距离100 mm (typically)
    等离子体杯 of secondary electrons)
    气体进气口径CF-16 (1.33“OD)
    气体流速1 - 5 sccm (1,5 sccm typical, gas dependant)
    工作真空度10-6mbar - 10-3mbar (1x10-5mbar typical in chamber with 300l/s pimp). Low 10-6 mbar range possible - beam current then 140μA max.
    激发模式微波放电等离子体 (无灯丝)
    安装口径CF-35 (2.75“OD)
    枪直径34mm (真空端)
    泄露阀需要气体质量流量计


第二代等离子体源,可以提供离子源,原子源,离子/原子混合源
Plasma Source, GenII
原子源主要用途:
制备氮化物,
e.g. GaN, AlN, GaAsN, SiN etc.
氢原子清洗,
氢原子辅助MBE.
制备氧化物,
e.g. ZnO, Superconductors, Optical coatings, Dielectrics. 
掺杂,
 e.g. ZnSe
离子源用途
:
离子束辅助沉积
(IBAD) for both UHV and HV processes
溅射沉积,双离子束溅射,
Sputter deposition and dual ion beam sputtering
溅射清洗/表面科学中的样品表面处理,
Sputter cleaning / surface preparation in surface science, MBE and HV sputter processes.
原位刻蚀,
e.g. Chlorine
技术参数:

Vacuum compatibility: Fully UHV compatible
Bakeable: >200°C
Microwave power: 250W max at 2.45GHz
Magnet type: Permanent rare-earth. Removeable for bakeout without breaking vacuum
Mounting: NW63CF (4.5"OD)
In vacuum length: 300mm (custom lengths possible): In vacuum diameter max = 57mm
Beam diameter: ~25mm at source (narrower beams also easily produced)
Plasma cup: Alumina
Aperture: Alumina or Boron Nitride
Gas flow rate: 0.01-100sccm depending on aperture selected
Working pressure: ~10-7 Torr to 5x10-3 Torr depending on aperture, pump and application - please contact tectra to discuss your application. Differential pumping option available
Working Distance: 50mm-300mm. 150mm typical
Cooling: Fully water-cooled (including magnetron)
Power supplies:
Microwave
Grid supply*
* Ion and Hybrid Source only
19” rack mount. 3U height. 230VAC, 50Hz or 115VAC, 60Hz
19” rack mount. 3U height. 230VAC, 50Hz or 115VAC, 60Hz
主要特点:
Key Features of the Plasma Source:
Filamentless
Suitable for use with most gases including reactive gases such as oxygen, chlorine, hydrogen, nitrogen etc.
No microwave tuning
Factory set. Simply turn the plasma on and off.
User configurable
The extraction optics are designed to be quickly and easily exchanged allowing users to customise their source to suit a particular combination of sample size, working pressure and current density. Easily exchanged apertures enable beam diameter, gas load and atom flux to be optimised.
simple bakeout preparation
new bakeable ECR magnets allow simple bekeout preparation by just undoing 4 screws. The magnets do not need to be removed but are still on the air side on a closed cooling loop. Hence no sintered material is exposed vacuum.
Al2O3 plasma region
Alumina plasma cup as standard with higher yield of secondary electrons, better resistance against aggressive gases such as Oxygen and ideal plasma striking capability
compact
the air side envilope sizes are brought to a minimum of just 258mm from flange (knife edge side) to case end

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