相关文章
Related Articles详细介绍
等离子体去胶机(高性价比)
仪器应用:
Isotropic dry etching of polymer (photo resist)
Cleaning of silicon (or glass) wafer surface
Removal of native oxide on wafer
等离子体去胶机(高性价比)技术参数:
Sample size & throughput : 4 ~ 8inch, Single wafer
RF power : 600W @13.56MHz, Auto matching control
Substrate chuck : Heating or Cooling available (selectable)
Process gas : O2, CF4 ,Ar, N2
Gas supply method : Showerhead type
Ultimate pressure : ≤ 5×10-3Torr
Vacuum pump : Rotary pump
Process control : Auto process control (PLC)
常用工艺参数:
Photoresist Etch
gas | 100% O2 |
operating pressure | 100 millitorr |
power level | 100 watts |
etch rate | 997 angstroms/min |
uniformity | +/- 5% |
Nitride Etch
gas | 95% CF4 / 5% O2 |
operating pressure | 100 millitorr |
power level | 100 watts |
etch rate | 450 angstroms/min |
uniformity | +/- 5% |
BiPolar Silicon Glass (BPSG) Etch
gas | 95% CF4 / 5% O2 |
operating pressure | 100 millitorr |
power level | 100 watts |
etch rate | 520 angstroms/min |
uniformity | +/- 5% |
PolySilicon Glass (PSG) Etch
gas | 95% CF4 / 5% O2 |
operating pressure | 100 millitorr |
power level | 100 watts |
etch rate | 450 angstroms/min |
uniformity | +/- 5% |
Oxide Etch (SiO2)
gas | 95% CF4 / 5% O2 |
operating pressure | 100 millitorr |
power level | 100 watts |
etch rate | 200 angstroms/min |
uniformity | +/- 10% |
Aluminum Etch*
gas | 80% BCl3 /20% Cl2 |
operating pressure | 150 millitorr |
power level | 150 watts |
etch rate | 200 angstroms/min |
uniformity | +/- 5% |
产品咨询
电话
微信扫一扫